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Same model may have multiple batches, images only for reference.
BDP948H6433XTMA1 Real Image
Same model may have multiple batches, images only for reference.

BDP948H6433XTMA1

Part No BDP948H6433XTMA1
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANS PNP 45V 3A SOT223-4 / Bipolar (BJT) Transistor PNP 45 V 3 A 100MHz 5 W Surface Mount PG-SOT223-4
Datasheet
BDP948H6433XTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Infineon Technologies
Package Tape & Reel (TR)
Product Status Not For New Designs
Transistor Type PNP
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA, 1V
Power - Max 5 W
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4
Base Product Number BDP948
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names SP000748380,2156-BDP948H6433XTMA1,INFINFBDP948H6433XTMA1,BDP 948 H6433-ND,BDP 948 H6433
Standard Package 4,000
Win Source Part Number 1049063-BDP948H6433XTMA1
Ultra Librarian 3D Model Ultra Librarian BDP948H6433XTMA1 CAD Model

Description

The Infineon Technologies BDP948H6433XTMA1 is a PNP bipolar transistor that belongs to the Transistors - Bipolar (BJT) - Single family of discrete semiconductor products.

  • Application: This component is designed to be used in various applications that require amplification or switching of electrical signals.
  • Maximum power dissipation: 5 W
  • Maximum collector-emitter breakdown voltage: 45 V
  • Packaging: tape and reel package
  • Standard package: 4,000

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