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Same model may have multiple batches, images only for reference.
BFP182WE6327 Real Image
Same model may have multiple batches, images only for reference.

BFP182WE6327

Part No BFP182WE6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description RF TRANSISTOR, L BAND, NPN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr Infineon Technologies
Package Bulk
Product Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain 22dB
Power - Max 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 8V
Current - Collector (Ic) (Max) 35mA
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Supplier Device Package PG-SOT343-4
Standard Package 3,463 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 722668-BFP182WE6327
Ultra Librarian 3D Model Ultra Librarian BFP182WE6327 CAD Model

Description

The 722668-BFP182WE6327 is a bipolar RF transistor, manufactured by Infineon Technologies.

  • Component Type: NPN transistor
  • Maximum Power: 250mW
  • Collector-Emitter Breakdown Voltage: 12V
  • Maximum Collector Current: 35mA
  • Gain: 22dB
  • Frequency Range: 8GHz
  • Package: SC-82A (SOT-343)
  • ECCN Classification: EAR99
  • Product Status: Active

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