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BFP450E6327BTSA1

Part No BFP450E6327BTSA1
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANS NPN RF 4.5V SOT-343
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 5V
Frequency - Transition 24GHz
Noise Figure (dB Typ @ f) 1.25dB @ 1.8GHz
Gain 15.5dB
Maximum Power Dissipation 450mW
Typical Gain (hFE) (Min) 60 @ 50mA, 4V
Maximum Current Collector 100mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT343-4
Win Source Part Number 104484-BFP450E6327BTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFP450E6327BTSA1 CAD Model

Description

Product Overview

The BFP450E6327BTSA1 is a robust NPN Silicon RF transistor designed for high-gain performance applications. Its exceptional high-frequency capability makes it ideal for a range of RF applications.

Features and Benefits

  • High gain-bandwidth product for superior amplification
  • Low noise figure enhancing signal clarity
  • SMT package for space-efficient designs
  • Wide frequency range suitable for various applications

Applications

  • RF communications systems
  • Signal amplifiers
  • Low noise amplifiers (LNAs)
  • RF mixers and oscillators

Additional Details

This component excels in environments that require effective amplification and consistent performance across a wide range of frequencies.

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Shipping Information

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