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BFP780H6327XTSA1

Part No BFP780H6327XTSA1
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description RF TRANS NPN 6.1V 900MHZ SOT343  /  RF Transistor NPN 6.1V 120mA 900MHz 600mW Surface Mount PG-SOT343-4-1
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Mfr Infineon Technologies
Package Tape & Reel
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 6.1V
Frequency - Transition 900MHz
Noise Figure (dB Typ @ f) 1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz
Gain 27dB
Power - Max 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 90mA, 5V
Current - Collector (Ic) (Max) 120mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case SC-82A, SOT-343
Supplier Device Package PG-SOT343-4-1
Base Product Number BFP780
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names BFP780H6327XTSA1TR,BFP780H6327XTSA1-ND,BFP780H6327XTSA1DKR,SP000924978,BFP780H6327XTSA1CT
Standard Package 3,000
Win Source Part Number 964435-BFP780H6327XTSA1
Ultra Librarian 3D Model Ultra Librarian BFP780H6327XTSA1 CAD Model

Description

The Infineon Technologies BFP780H6327XTSA1 is an NPN bipolar transistor designed for RF applications. Bold the product name (e.g., BAV99S,135 → BFP780H6327XTSA1) and manufacturer (e.g., Nexperia USA Inc. → Infineon Technologies).

  • Power: 600mW (max)
  • Voltage Collector Emitter Breakdown: 6.1V
  • Current Collector (Ic): 120mA
  • Gain: 27dB
  • DC Current Gain (hFE): 85 @ 90mA, 5V
  • Transition Frequency: 900MHz
  • Noise Figure: 1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz
  • Package: SC-82A, SOT-343
  • Mounting: Surface Mountable
  • Temperature Range: 150°C (TJ)
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.2727 $61.3635
10+ $10.0700 $100.7000
16+ $9.7553 $156.0848
22+ $9.4406 $207.6932
28+ $9.1259 $255.5252
37+ $8.1818 $302.7266
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Availability: 760 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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