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BFS483H6327XTSA1

Part No BFS483H6327XTSA1
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANS RF NPN 12V 65MA SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 0.9dB to 1.4dB @ 900MHz to 1.8GHz
Gain 19dB
Maximum Power Dissipation 450mW
Typical Gain (hFE) (Min) 70 @ 15mA, 8V
Maximum Current Collector 65mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Win Source Part Number 100573-BFS483H6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BFS483H6327XTSA1 CAD Model

Description

Product Overview

The BFS483H6327XTSA1 is a premium NPN RF transistor, offering outstanding performance for sophisticated RF and microwave applications. Virtually unmatched in its class, it provides a strong foundation for high-end electronic projects.

Features and Benefits

  • Superior Performance: High gain and low noise to optimize operational efficiency.
  • Wide Application Range: Suitable for diverse RF and microwave design needs.
  • Highly Reliable: Ensures operation consistency in challenging environments.

Applications

  • Advanced RF engineering
  • Microwave communication systems
  • Professional broadcasting equipment

The BFS483H6327XTSA1 is tailored for professionals demanding the best in RF and microwave technology, securing its place as a vital component in the evolution of electronic systems.

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Shipping Information

Shipped from HK warehouse
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