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Same model may have multiple batches, images only for reference.
BG3123E6327HTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BG3123E6327HTSA1

Part No BG3123E6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH DUAL 8V 25MA SOT-363
Datasheet
BG3123E6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 N-Channel (Dual)
Frequency 800MHz
Gain 25dB
Voltage - Test 5V
Current Rating 25mA, 20mA
Noise Figure 1.8dB
Current - Test 14mA
Voltage Rating 8V
Case / Package PG-SOT363-6
Win Source Part Number 1023283-BG3123E6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian BG3123E6327HTSA1 CAD Model

Description

The BG3123E6327HTSA1 is a dual N-channel transistor designed for use in discrete semiconductor products from Infineon Technologies.

  • Voltage rating: 8V
  • Current rating: 25mA
  • Frequency: 800MHz
  • Gain: 25dB
  • Noise figure: 1.8dB
  • Packaged in a PG-SOT363-6 case
  • Suitable for SMD (SMT) mounting
  • Supply and demand status is balanced
  • 3k pcs per package

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