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Same model may have multiple batches, images only for reference.
BSB012N03LX3G
Same model may have multiple batches, images only for reference.

BSB012N03LX3G

Part No BSB012N03LX3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 39A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 169 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 16900 pF @ 15 V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON
Standard Package 277 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 913557-BSB012N03LX3G
Ultra Librarian 3D Model Ultra Librarian BSB012N03LX3G CAD Model

Description

The OptiMOS™ MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) is a high-performance electronic component designed for use in various applications.

  • Vdss: 30V
  • FET Type: N-Channel
  • Rds On: 1.2mOhm @ 30A, 10V Vgs
  • Power Dissipation: 2.8W
  • Mounting Type: Surface Mount
  • Manufacturer: Infineon Technologies

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