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BSB013NE2LXI

Part No BSB013NE2LXI
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 163A WDSON-2
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 36A (Ta), 163A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 4400pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 57W (Tc)
Maximum Rds On at Id,Vgs 1.3 mOhm @ 30A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package MG-WDSON-2, CanPAK M
Dimension 3-WDSON
Win Source Part Number 1024316-BSB013NE2LXI
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSB013NE2LXI CAD Model

Description

The Infineon Technologies 448103 is a MOSFET transistor that operates in N-Channel polarity.

  • Manufacturer: Infineon Technologies
  • Polarity: N-Channel
  • Power Dissipation (Max): 2.8W (Ta) or 57W (Tc)
  • Drive Voltage: 4.5V to 10V
  • Packaging: Reel-tr
  • Mounting: SMD (SMT)
  • Operating Temperature: -40°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current @ 25°C: 36A (Ta) or 163A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Gate Charge (Max): 62nC @ 10V
  • Input Capacitance (Max): 4400pF @ 12V
  • Gate-Source Voltage (Max): ±20V
  • Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 30A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5082 $60.3280
95+ $1.2376 $117.5720
145+ $1.1989 $173.8405
200+ $1.1602 $232.0400
260+ $1.1215 $291.5900
345+ $1.0055 $346.8975
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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