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Same model may have multiple batches, images only for reference.
BSC025N03MSG Real Image
Same model may have multiple batches, images only for reference.

BSC025N03MSG

Part No BSC025N03MSG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description BSC025N03 - 12V-300V N-CHANNEL P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 147A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7600 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta), 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 709764-BSC025N03MSG
Ultra Librarian 3D Model Ultra Librarian BSC025N03MSG CAD Model

Description

The 709764-BSC025N03MSG is an N-Channel MOSFET transistor from Infineon Technologies.

  • Series: OptiMOS™ 3
  • Application: discrete semiconductor applications
  • Drain-to-Source Voltage: 30V
  • Continuous Drain Current: 23A
  • Maximum On-Resistance: 2.5mOhm @ 30A and 10V gate-source voltage
  • Threshold Voltage: 2V @ 250µA
  • Maximum Power Dissipation: 2.5W
  • Package: 8-PowerTDFN
  • Gate Charge: 98nC @ 10V gate-source voltage
  • Input Capacitance: 7600pF @ 15V
  • Operating Temperature Range: from -55°C to 150°C
  • Classification: EAR99
  • HTSUS Code: 8541.29.0095
  • Status: active product

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