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Same model may have multiple batches, images only for reference.
BSC029N025S G Real Image
Same model may have multiple batches, images only for reference.

BSC029N025S G

Part No BSC029N025S G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 100A TDSON-8
Datasheet
BSC029N025S G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 80μA
Max Gate Charge 41nC @ 5V
Max Input Capacitance 5090pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Maximum Rds On at Id,Vgs 2.9 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 099774-BSC029N025S G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSC029N025S G CAD Model

Description

BSC029N025S G

The BSC029N025S G is a high-performance N-channel power MOSFET ideal for various electronic switching applications. Its advanced technology ensures minimal conduction loss, enhancing overall efficiency in circuit designs.

  • Applications/Projects:
    • Power Supplies
    • DC-DC Converters
    • Motor Drives
    • LED Lighting
  • Features and Benefits:
    • Low On-Resistance for reduced power loss
    • High-speed switching capability
    • Rugged design for reliability in demanding environments
    • Compact package for space-saving in designs
  • Additional Details:
    • Voltage rating: 25V
    • Enhanced thermals for cooling efficiency

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