The BSC060N10NSG is an N-channel power MOSFET from Infineon Technologies. It is designed for a broad range of applications that demand high efficiency and reliable power switching. This MOSFET utilizes advanced technology to minimize on-state resistance and switching losses, making it suitable for use in various power management circuits.

Applications

• Synchronous rectification in SMPS
• DC-DC converters
• Motor control
• LED lighting
• Battery management systems

Features

• Low on-resistance (RDS(on)) of 6 mΩ
• High current capability (ID) of 40 A
• Optimized for high switching frequencies
• Logic Level compatibility
• Avalanche rated
• Pb-free and RoHS compliant

Benefits

• Improved energy efficiency
• Reduced heat dissipation
• Higher power density
• Simplified drive circuitry
• Increased reliability
• Environmentally friendly

Technical Specifications

The BSC060N10NSG features a drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 40 A. With a typical on-resistance (RDS(on)) of 6 mΩ at VGS = 10 V, it ensures minimal conduction losses. The device is typically packaged in a PowerStage 3x3. Its design allows for efficient switching performance, reducing power losses at higher frequencies. The integrated avalanche diode provides enhanced protection against voltage transients. It is designed to meet the stringent requirements of modern power electronic systems.