The BSC067N06LS3G is a high-performance N-channel power MOSFET from Infineon Technologies. It utilizes advanced OptiMOS™ technology to achieve very low on-resistance and excellent switching characteristics. This MOSFET is designed for synchronous rectification in Switched Mode Power Supplies (SMPS), DC-DC converters, and other power management applications.

Applications

• Synchronous Rectification in SMPS
• DC-DC converters
• Power Management in Servers
• Battery Management Systems
• High-Frequency Switching Applications

Features

• Optimized for Synchronous Rectification
• Very Low On-Resistance (RDS(on)) of 6.7 mΩ
• High Current Capability (ID) of 40 A
• Fast Switching Speed
• Logic Level Drive
• Avalanche Rated
• Pb-Free and RoHS Compliant

Benefits

• Increased Efficiency in Power Conversion
• Reduced Power Losses and Heat Dissipation
• Improved Power Density
• Simplified Gate Drive Circuitry
• Enhanced System Reliability
• Environmentally Friendly

Technical Specifications

The BSC067N06LS3G features a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 40 A. Its extremely low on-resistance (RDS(on) = 6.7 mΩ at VGS = 10 V) minimizes conduction losses. The device is packaged in a PG-TDSON-8 package, offering excellent thermal performance in a compact footprint. The MOSFET’s fast switching speed reduces switching losses. Its avalanche rating enhances reliability in inductive load applications. The BSC067N06LS3G is designed for high-frequency, high-efficiency power conversion, making it ideal for demanding applications.