The BSC084P03NS3G is a P-channel power MOSFET from Infineon Technologies, utilizing their advanced OptiMOS™ technology. This MOSFET is designed for various power management applications, including load switching, reverse polarity protection, and high-side switching in battery-powered devices and DC-DC converters.

Applications

• Load Switching
• Reverse Polarity Protection
• High-Side Switching in Battery-Powered Devices
• DC-DC Converters
• Power Management in Portable Devices

Features

• Low On-Resistance (RDS(on)) of 8.4 mΩ
• High Current Capability (ID) of -30 A
• Optimized for High-Side Switching
• Fast Switching Speed
• Logic Level Drive
• Avalanche Rated
• Pb-Free and RoHS Compliant

Benefits

• Efficient Power Switching
• Reduced Power Losses
• Simplified Circuit Design for High-Side Switching
• Enhanced System Reliability
• Improved Battery Life in Portable Devices
• Environmentally Friendly

Technical Specifications

The BSC084P03NS3G features a drain-source voltage (VDS) of -30 V and a continuous drain current (ID) of -30 A. Its low on-resistance (RDS(on) = 8.4 mΩ at VGS = -10 V) ensures minimal conduction losses. The device is packaged in a PowerStage 3x3 package, offering excellent thermal performance and a small footprint. Its fast switching speed reduces switching losses. The P-channel MOSFET is particularly well-suited for high-side switching applications where a simple drive circuit is desired. The device is also avalanche rated, further enhancing its robustness.