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Same model may have multiple batches, images only for reference.
TPC8067-H Real Image
Same model may have multiple batches, images only for reference.

TPC8067-H

Part No TPC8067-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9A 8SOP
Datasheet
TPC8067-H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 100μA
Max Gate Charge 9.5nC @ 10V
Max Input Capacitance 690pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 4.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 056784-TPC8067-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8067-H CAD Model

Description

The Toshiba Semiconductor and Storage TPC8067-H is a high-performance MOSFET designed for use in electronic circuits and systems.

  • Polarity: N-Channel
  • Maximum Power Dissipation: 1W (Ta)
  • Category: Discrete Semiconductor Products
  • Maximum Rds On at Id, Vgs: 25 mOhm @ 4.5A, 10V
  • Popularity: medium
  • Supply and Demand: balanced
  • Applications: power supplies, motor control circuits, and lighting systems

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4137 $57.9180
345+ $0.3396 $117.1620
530+ $0.3289 $174.3170
730+ $0.3183 $232.3590
940+ $0.3077 $289.2380
1,260+ $0.2758 $347.5080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,470 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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