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BSC100N10NSFGATMA1

Part No BSC100N10NSFGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 90A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 11.4A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 110μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 2900pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 156W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 135462-BSC100N10NSFGATMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSC100N10NSFGATMA1 CAD Model

Description

Description:

The BSC100N10NSFGATMA1 is a versatile N-channel MOSFET offering minimal resistance and superior efficiency. It is engineered to deliver reliable performance in high-frequency applications.

Features and Benefits:

  • Highly efficient with low power loss
  • Durable and reliable under heavy loads
  • Fast thermal response and heat dissipation

Applications and Projects:

  • Switch-mode power supplies (SMPS)
  • Battery-powered devices
  • LED drivers
  • Consumer electronics

This product ensures significant power savings and extended life for modern electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6188 $64.7520
90+ $1.3283 $119.5470
135+ $1.2868 $173.7180
190+ $1.2452 $236.5880
240+ $1.2037 $288.8880
325+ $1.0792 $350.7400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,300 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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