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BSC119N03S

Part No BSC119N03S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOS2 Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1154705-BSC119N03S
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSC119N03S CAD Model

Description

The BSC119N03S is a power MOSFET from Infineon Technologies, part of their OptiMOS™ family. It's designed for high-efficiency power conversion and is commonly used in various applications needing efficient switching and low on-state resistance.

Applications

  • Synchronous rectification in AC/DC and DC/DC converters
  • Motor control applications
  • DC-DC converters in computing and telecom systems
  • Power management in battery-powered devices

Features

  • Optimized for synchronous rectification
  • Very low on-resistance R<sub>DS(on) to minimize conduction losses
  • Logic level drive capability (V<sub>GS(th) compatible with microcontrollers)
  • Avalanche rated for robust performance
  • 100% Avalanche tested
  • Pb-free lead plating; RoHS compliant

Benefits

  • Improved system efficiency due to reduced conduction losses
  • Reduced power dissipation and heat generation
  • Simplified gate drive circuitry
  • Enhanced system reliability due to avalanche capability
  • Environmentally friendly due to Pb-free and RoHS compliance

Detailed Specifications

The BSC119N03S boasts an extremely low on-resistance, typically around 11.9 mΩ at V<sub>GS = 10V. Its drain-source voltage (V<sub>DS) rating is 30V, and it can handle a continuous drain current (I<sub>D) of up to 42A at a case temperature of 25°C. It is available in a PG-TDSON-8 package, which facilitates efficient heat dissipation. The gate-source threshold voltage (V<sub>GS(th)) is typically between 1V and 2V, enabling direct drive from logic-level signals. The device exhibits fast switching speeds, contributing to higher efficiency in switching applications. The device also features a low gate charge (Q<sub>g), minimizing switching losses. Its thermal resistance from junction to case (R<sub>thJC) is very low, allowing for effective heat removal. Its avalanche energy rating (E<sub>AS) ensures robustness against transient voltage spikes.

The OptiMOS™ technology from Infineon also ensures superior switching performance compared to conventional MOSFETs. The device’s construction and materials contribute to its long-term reliability and stability under various operating conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,533 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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