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BSC889N03MSGATMA1

Part No BSC889N03MSGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 44A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Ta) 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1500pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
Maximum Rds On at Id,Vgs 9.1 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 101876-BSC889N03MSGATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC889N03MSGATMA1 CAD Model

Description

BSC889N03MSGATMA1 - Advanced Efficiency N-MOSFET

The BSC889N03MSGATMA1 MOSFET is a versatile and high-efficiency semiconductor device, designed to enhance the performance of a wide array of electronic systems.

Applications/Projects:

  • High-Fidelity Audio Amplifiers
  • Energy Storage Systems
  • Internet of Things (IoT) Devices
  • Solar Power Inverters

Features & Benefits:

  • Optimized for low switching loss operations
  • Robust design for maximum ruggedness
  • Improved ESD protection capabilities
  • Sustainable and compliant manufacturing practices

Additional Details:

The BSC889N03MSGATMA1 is ideal for applications requiring high durability and energy efficiency, ensuring flexibility and compatibility with dynamic power demands.

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