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Same model may have multiple batches, images only for reference.
BSD816SNH6327XTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSD816SNH6327XTSA1

Part No BSD816SNH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 1.4A SOT363
Datasheet
BSD816SNH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.5V
Gate-Source Threshold Voltage 0.95V @ 3.7μA
Max Gate Charge 0.6nC @ 2.5V
Max Input Capacitance 180pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 160 mOhm @ 1.4A, 2.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 1024365-BSD816SNH6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSD816SNH6327XTSA1 CAD Model

Description

The Infineon Technologies BSD816SNH6327XTSA1 is an N-channel MOSFET transistor in a PG-SOT363-6 package.

  • Drain-Source Breakdown Voltage: 20V
  • Maximum Power Dissipation: 500mW
  • Maximum Rds On @ Id,Vgs: 160 mOhm @ 1.4A and 2.5V
  • Maximum Gate-Source Voltage: ±8V
  • Ideal for: Use in discrete semiconductor products
  • Mounting Technology: SMD (SMT)
  • Gate-Source Threshold Voltage: 0.95V @ 3.7μA
  • Maximum Gate Charge: 0.6nC @ 2.5V

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