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Same model may have multiple batches, images only for reference.
BSL296SNH6327XTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSL296SNH6327XTSA1

Part No BSL296SNH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 1.4A 6TSOP
Datasheet
BSL296SNH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.8V @ 100μA
Max Gate Charge 4nC @ 5V
Max Input Capacitance 152.7pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 460 mOhm @ 1.26A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package P-TSOP6-6
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1024387-BSL296SNH6327XTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSL296SNH6327XTSA1 CAD Model

Description

The Infineon Technologies 1024387-BSL296SNH6327XTSA1 is an N-Channel MOSFET electronic component that has a popularity of medium.

  • Popularity: medium
  • Maximum Power Dissipation: 2W (Ta)
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Rds On at Id,Vgs: 460 mOhm @ 1.26A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: P-TSOP6-6
  • Dimension: SOT-23-6 Thin, TSOT-23-6
  • Mounting Type: SMD (SMT)
  • Drive Voltage: 4.5V, 10V
  • Status: Active
  • Fake-Threat Probability: 39%
  • Supply and Demand Status: Balance

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