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BSO200N03

Part No BSO200N03
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6.6A 8DSO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.6A
Maximum Rds On at Id,Vgs 20 mOhm @ 7.9A, 10V
Gate-Source Threshold Voltage 2V @ 13μA
Max Gate Charge 8nC @ 5V
Max Input Capacitance 1010pF @ 15V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-DSO-8
Win Source Part Number 237264-BSO200N03
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSO200N03 CAD Model

Description

BSO200N03 Description

The BSO200N03 is an advanced N-channel power MOSFET designed to deliver high performance in a compact package. Constructed using state-of-the-art semiconductor fabrication, this device offers low on-resistance and minimal gate charge, making it ideal for applications that demand high efficiency and fast switching.

  • Efficient power conversion systems
  • Battery-powered applications
  • Motor control units
  • DC-DC converters

Key Features and Benefits

  • Low on-state resistance
  • Fast switching capabilities
  • High efficiency
  • Compact packaging

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,500 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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