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Same model may have multiple batches, images only for reference.
BSO330N02KGFUMA1 Real Image
Same model may have multiple batches, images only for reference.

BSO330N02KGFUMA1

Part No BSO330N02KGFUMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 5.4A 8DSO / Trans MOSFET N-CH 20V 5.4A 8-Pin DSO T/R
Datasheet
BSO330N02KGFUMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Part Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 5.4A
Rds On (Maximum) @ Id, Vgs 30 mOhm @ 6.5A, 4.5V
Vgs(th) (Maximum) @ Id 1.2V @ 20μA
Gate Charge (Qg) (Maximum) @ Vgs 4.9nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 730pF @ 10V
Power - Max 1.4W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Package PG-DSO-8
Win Source Part Number 770419-BSO330N02KGFUMA1
Popularity Medium
Supply and Demand Status Limited
Family Name BSO330N02KGFUMA1
Introduction Date February 05, 2008
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BSO330N02KGFUMA1 CAD Model

Description

The Infineon Technologies BSO330N02KGFUMA1 is a dual N-channel MOSFET transistor from Infineon Technologies.

  • Gate: Logic Level
  • Drain-Source Voltage: 20V
  • Continuous Drain Current: 5.4A @ 25°C
  • Power: 1.4W
  • Package: 8-SOIC
  • Width: 3.90mm
  • Operating Temperature Range: -55°C to 150°C
  • Gate Charge (Qg): 4.9nC @ 4.5V
  • Input Capacitance (Ciss): 730pF @ 10V
  • Status: Obsolete (EOL)
  • EOL Date: Estimated
  • Alternative Parts: SI9926ADY-T1-E3, UPA1756-A, TSM9926DCS RLG, Si9926ADY-T1

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