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Same model may have multiple batches, images only for reference.
BSS806NL6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSS806NL6327HTSA1

Part No BSS806NL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2.3A SOT23
Datasheet
BSS806NL6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.5V
Gate-Source Threshold Voltage 750mV @ 11μA
Max Gate Charge 1.7nC @ 2.5V
Max Input Capacitance 529pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 57 mOhm @ 2.3A, 2.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024531-BSS806NL6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS806NL6327HTSA1 CAD Model

Description

The Infineon Technologies BSS806NL6327HTSA1 is an N-Channel MOSFET with a maximum drain-source breakdown voltage of 20V and a continuous drain current @ 25°C of 2.3A (Ta).

  • Manufacturer: Infineon Technologies
  • Product Name: BSS806NL6327HTSA1
  • Channel Type: N-Channel
  • Maximum Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 2.3A (Ta)
  • Gate-Source Threshold Voltage: 750mV @ 11μA
  • Maximum Gate Charge: 1.7nC @ 2.5V
  • Maximum Rds On @ Id,Vgs: 57 mOhm @ 2.3A, 2.5V
  • Category: Discrete Semiconductor Products
  • Lifecycle Status: Obsolete
  • Package: PG-SOT23-3
  • Maximum Junction Temperature: 150°C
  • Packaging: Reel - TR
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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