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Same model may have multiple batches, images only for reference.
2SC5200N(S1,E,S) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SC5200N(S1,E,S)

Part No 2SC5200N(S1,E,S)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 230V 15A TO-3PL
Datasheet
2SC5200N(S1,E,S) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Transistor Polarity NPN
Maximum Current Collector 15A
VCEO Maximum Collector-Emitter Breakdown Voltage 230V
Max Vce (sat) 3V @ 800mA, 8A
Collector Cut-off Current(Max) 5μA (ICBO)
Typical Gain (hFE) (Min) 80 @ 1A, 5V
Maximum Power Dissipation 150W
Frequency - Transition 30MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P(N)
Win Source Part Number 1027398-2SC5200N(S1,E,S)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC5200N(S1,E,S) CAD Model

Description

The 2SC5200N(S1,E,S) is an NPN transistor manufactured by Toshiba Semiconductor and Storage.

  • Mounting Type: through-hole
  • Package: TO-3P(N)
  • Category: discrete semiconductor products
  • Maximum Current Collector: 15A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 230V
  • Maximum Vce (sat): 3V @ 800mA, 8A
  • Collector Cut-Off Current (Max): 5μA (ICBO)
  • Typical Gain (hFE) (Min): 80 @ 1A, 5V
  • Maximum Power Dissipation: 150W
  • Supply and Demand Status: balanced
  • Manufacturer: Toshiba Semiconductor and Storage

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85+ $1.2279 $104.3715
130+ $1.1895 $154.6350
175+ $1.1512 $201.4600
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305+ $0.9977 $304.2985
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