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Same model may have multiple batches, images only for reference.
BSS84P-E6327 Real Image
Same model may have multiple batches, images only for reference.

BSS84P-E6327

Part No BSS84P-E6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 170MA SOT-23
Datasheet
BSS84P-E6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 1.5nC @ 10V
Max Input Capacitance 19pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 8 Ohm @ 170mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 106387-BSS84P-E6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS84P-E6327 CAD Model

Description

Product Description

The BSS84P-E6327 offers excellent efficiency and reliability, ideal for switching applications in lower voltage operations. Its high-speed switching and low on-resistance make it suitable for a range of electronic projects.

Features and Benefits

  • High ESD protection for enhanced durability
  • Low threshold voltage for ease of use
  • SMD package for easy integration

Applications and Projects

  • Portable electronics
  • Reverse polarity protection circuits
  • Industrial automation systems

Additional Details

This MOSFET is optimal for engineers looking to design efficient power solutions with minimal spatial footprint.

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