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BSZ033NE2LS5

Part No BSZ033NE2LS5
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Metal Oxide Semiconductor Field Effect Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1154996-BSZ033NE2LS5
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSZ033NE2LS5 CAD Model

Description

The BSZ033NE2LS5 is a power MOSFET manufactured by Infineon Technologies. This N-channel MOSFET is designed for high-efficiency power switching applications. It is characterized by its low on-state resistance (RDS(on)), enabling efficient power conversion and minimal heat dissipation. It's often used in synchronous rectification, DC-DC converters, and motor control applications.

Applications

  • Synchronous Rectification: Used in synchronous rectification circuits in power supplies to improve efficiency.
  • DC-DC Converters: Employed as a switching element in DC-DC converters for voltage regulation.
  • Motor Control: Utilized in motor control circuits to drive motors efficiently.
  • Power Management Systems: Integrated into power management systems for power distribution and control.
  • OR-ing Applications: Can be used in OR-ing configurations for redundant power supplies.

Features

  • N-Channel MOSFET: Operates with a positive gate-source voltage for switching.
  • Low On-State Resistance (RDS(on)): Minimizes conduction losses and improves efficiency.
  • Logic Level Gate Drive: Can be directly driven by logic-level signals.
  • Avalanche Rated: Withstands high voltage spikes and transients.
  • Optimized for High-Frequency Switching: Designed for efficient operation at high switching frequencies.

Benefits

  • High Efficiency: Reduces power consumption and improves overall system efficiency.
  • Simplified Drive Circuitry: Simplifies circuit design by allowing direct logic-level gate drive.
  • Robust Performance: Withstands high voltage spikes and transients, ensuring reliable operation.
  • Reduced Power Losses: Minimizes heat generation and improves thermal performance.
  • Improved Thermal Management: Enhanced thermal performance due to low RDS(on).

Additional Details

The BSZ033NE2LS5 typically features a trench MOSFET structure to minimize on-resistance and improve switching performance. Key specifications include drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and operating temperature range. The specific package type is a Power Stage 3x3 which aids in thermal management.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9546 $52.5030
130+ $0.7833 $101.8290
200+ $0.7588 $151.7600
275+ $0.7344 $201.9600
355+ $0.7099 $252.0145
475+ $0.6364 $302.2900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,125 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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