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BSZ088N03MSGATMA1

Part No BSZ088N03MSGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A TSDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 2100pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 35W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 111879-BSZ088N03MSGATMA1
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Communications & Networking, Computers & Computer Peripherals, Industrial
Ultra Librarian 3D Model Ultra Librarian BSZ088N03MSGATMA1 CAD Model

Description

BSZ088N03MSGATMA1

The BSZ088N03MSGATMA1 is characterized by its robust design and ability to handle high-density circuit requirements effectively, making it a preferred choice for designers focused on optimizing space and energy efficiency in complex systems.

  • Applications: Switching regulators, High-efficiency power modules, Actuator control
  • Features and Benefits: Compact size, Low switching losses, Durable design
  • Additional Details:
    • RDS(on): 8.8 mΩ
    • VGS(th): 1.2V min
    • Package: PG-TSDSON-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5388 $59.2680
265+ $0.4421 $117.1565
405+ $0.4284 $173.5020
560+ $0.4146 $232.1760
725+ $0.4007 $290.5075
965+ $0.3592 $346.6280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,248 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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