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BSZ120P03NS3G

Part No BSZ120P03NS3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOSTM P3 Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1109+
Reference case QFN
Manufacturer Infineon Technologies
Manufacturer Homepage www.infineon.com
Win Source Part Number 713833-BSZ120P03NS3G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSZ120P03NS3G CAD Model

Description

The BSZ120P03NS3G is a P-channel MOSFET from Infineon Technologies, part of their OptiMOS™ series. This power MOSFET is designed for high-efficiency power conversion and management applications. It features extremely low on-state resistance (RDS(on)) and optimized switching characteristics to minimize power losses and maximize system performance. The device is particularly well-suited for use in synchronous rectification and other high-frequency switching applications.

Applications:

  • Synchronous rectification in AC-DC power supplies
  • DC-DC converters
  • Battery management systems (BMS)
  • Load switching
  • Motor control

Features:

  • P-Channel MOSFET
  • Extremely low on-state resistance (RDS(on))
  • Optimized switching characteristics
  • Avalanche rated
  • Logic level driving
  • Pb-free lead finishing; RoHS compliant

Benefits:

  • High efficiency: Extremely low RDS(on) significantly reduces conduction losses.
  • Improved thermal performance: Allows for operation at higher power levels with enhanced reliability.
  • Fast switching: Optimized switching characteristics minimize switching losses and improve overall efficiency.
  • Simplified gate drive: Logic level compatibility allows for direct driving from microcontrollers and other logic devices.
  • Robustness: Avalanche rating provides protection against transient voltage spikes.

The BSZ120P03NS3G is typically supplied in a Power MOSFET package. Its optimized design ensures efficient heat dissipation. The device's electrical characteristics are tailored for high-frequency operation, making it an ideal choice for modern power supply designs.

Technical Specifications (typical values):

  • Drain-Source Voltage (VDS): -30 V
  • Gate-Source Voltage (VGS): ±20 V
  • Continuous Drain Current (ID): -27 A
  • On-State Resistance (RDS(on)): 12 mΩ (at VGS = -10 V)
  • Total Gate Charge (Qg): 24 nC

The BSZ120P03NS3G offers a high-performance solution for power management applications requiring high efficiency, low losses, and reliable operation. Its excellent characteristics make it a preferred choice for demanding applications in various industries.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4245 $50.9400
255+ $0.3977 $101.4135
395+ $0.3842 $151.7590
560+ $0.3574 $200.1440
730+ $0.3439 $251.0470
910+ $0.3305 $300.7550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 221,098 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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