The Infineon Technologies BSZ120P03NS3GATMA1 is a P-Channel MOSFET that has a drain-source breakdown voltage (Vds) of 30V and a continuous drain current (Id) of 11A (Ta), 40A (Tc) at a maximum power dissipation of 2.1W (Ta), 52W (Tc).

• Drain-Source Breakdown Voltage (Vds): 30V
• Continuous Drain Current (Id): 11A (Ta), 40A (Tc)
• Maximum Power Dissipation: 2.1W (Ta), 52W (Tc)
• Gate-Source Threshold Voltage: 3.1V @ 73μA
• Maximum Gate Charge: 45nC @ 10V
• Maximum Input Capacitance: 3360pF @ 15V
• Maximum Gate-Source Voltage: ±25V
• Package/Case: PG-TSDSON-8
• Mounting Style: Surface Mount Device (SMD)
• Product Status: Active
• Popularity: Medium
• Supply and Demand Status: Balanced