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BSZ130N03LS G

Part No BSZ130N03LS G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A TSDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 970pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 005238-BSZ130N03LS G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSZ130N03LS G CAD Model

Description

BSZ130N03LS G Transistor

The BSZ130N03LS G is a high-performance MOSFET designed to handle demanding power switching applications with utmost efficiency. Its compact design and advanced technology make it suitable for a wide range of projects.

  • Applications:
    • Switched-mode power supplies (SMPS)
    • Battery management systems
    • DC-DC converters
    • Motor control circuits
  • Features and Benefits:
    • Low on-resistance for reduced power loss
    • High-speed switching capability
    • Robust thermal performance
    • Compact SMD package for space-saving designs
  • Additional Details:
    • Vds: 30V
    • Id: 100A
    • Package: SuperSO8

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3240 $50.2200
380+ $0.2659 $101.0420
585+ $0.2576 $150.6960
805+ $0.2493 $200.6865
1,040+ $0.2410 $250.6400
1,390+ $0.2161 $300.3790
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,377 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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