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BSZ340N08NS3 G

Part No BSZ340N08NS3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 23A TSDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 6A (Ta), 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 12μA
Max Gate Charge 9.1nC @ 10V
Max Input Capacitance 630pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 32W (Tc)
Maximum Rds On at Id,Vgs 34 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 118033-BSZ340N08NS3 G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSZ340N08NS3 G CAD Model

Description

BSZ340N08NS3 G High-Voltage MOSFET

The BSZ340N08NS3 G is engineered for high-voltage applications requiring robust performance and low power consumption. Its design complements demanding electronic environments.

  • Applications:
    • Renewable energy inverters
    • Telecommunications equipment
    • Electric vehicle systems
    • High-voltage power supplies
  • Features and Benefits:
    • Exceptional voltage handling up to 80V
    • High thermal shock tolerance
    • Ultra-low Rds(on) for energy savings
    • Designed to reduce switching losses
  • Additional Details:
    • Vds: 80V
    • Id: 40A
    • Package: SuperSO8

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4717 $51.8870
230+ $0.4418 $101.6140
355+ $0.4269 $151.5495
505+ $0.3971 $200.5355
655+ $0.3821 $250.2755
820+ $0.3672 $301.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,994 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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