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Same model may have multiple batches, images only for reference.
BUZ102SL Real Image
Same model may have multiple batches, images only for reference.

BUZ102SL

Part No BUZ102SL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET / N-Channel 55 V 47A (Tc) 120W (Tc) Through Hole TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series SIPMOS®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±14V
Input Capacitance (Ciss) (Max) @ Vds 1730 pF @ 25 V
Power Dissipation (Max) 120W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 85584-BUZ102SL
Ultra Librarian 3D Model Ultra Librarian BUZ102SL CAD Model

Description

Overview

The BUZ102SL MOSFET is engineered for low telemetry noise and high electromagnetic compatibility, making it a top choice for sensitive electronic applications.

Features and Benefits

  • Low electromagnetic interference.
  • Stability in rapidly changing environments.
  • Enhanced linearity for precision control.

Applications

  • Aerospace electronics
  • Communication systems
  • Precision measurement equipment

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