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BUZ103SL-E3045A

Part No BUZ103SL-E3045A
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET / N-Channel 55 V 28A (Tc) 75W (Tc) Surface Mount PG-TO263-3-2
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series SIPMOS®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) -20V
Input Capacitance (Ciss) (Max) @ Vds 960 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1050117-BUZ103SL-E3045A
Ultra Librarian 3D Model Ultra Librarian BUZ103SL-E3045A CAD Model

Description

The BUZ103SL-E3045A is a single N-channel MOSFET transistor from the SIPMOS™ series.

  • Application: Discrete semiconductor applications
  • Package: Bulk
  • Standard Package Quantity: 1,000 pieces
  • Drain-Source Voltage: 55V
  • Continuous Drain Current: 28A @ 25°C
  • On-Resistance: 26mOhm @ a drain current of 20A and a gate-source voltage of 10V
  • Mounting Type: Surface mountable
  • Package: TO-263-3, D²Pak
  • Operating Temperature Range: -55°C to 175°C
  • Manufacturer: Infineon Technologies
  • Status: Active

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