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Same model may have multiple batches, images only for reference.
BUZ30A Real Image
Same model may have multiple batches, images only for reference.

BUZ30A

Part No BUZ30A
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 21A TO220-3
Datasheet
BUZ30A Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series SIPMOS®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 500 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 573758-BUZ30A
Ultra Librarian 3D Model Ultra Librarian BUZ30A CAD Model

Description

The 573758-BUZ30A is a N-Channel MOSFET transistor from Infineon Technologies' SIPMOS™ series.

  • Drain to Source Voltage: 200V
  • Continuous Drain Current: 21A
  • On-Resistance: 130mOhm @ 10V Gate-Source Voltage and 13.5A Drain Current
  • Gate Threshold Voltage: 4V
  • Maximum Power Dissipation: 125W
  • Package: TO-220-3
  • Mounting: Through-Hole
  • Input Capacitance: 1900pF
  • Operating Temperature Range: -55°C to 150°C
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6387 $60.6765
225+ $0.5244 $117.9900
345+ $0.5082 $175.3290
470+ $0.4920 $231.2400
610+ $0.4759 $290.2990
815+ $0.4262 $347.3530
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Availability: 6,080 pieces
MOQ: 95 pcs
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