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BUZ73

Part No BUZ73
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 7A TO220-3
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series SIPMOS®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 25 V
Power Dissipation (Max) 40W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Standard Package 500 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 573799-BUZ73
Ultra Librarian 3D Model Ultra Librarian BUZ73 CAD Model

Description

The BUZ73 is a single N-channel MOSFET transistor from the SIPMOS® series.

  • Application Field: discrete semiconductor applications
  • Package: tube
  • Standard Quantity: 500 pcs
  • MOSFET Type: metal oxide
  • Drain-Source Voltage: 200V
  • Continuous Drain Current: 7A @ 25°C
  • On-Resistance: 400mOhm @ a drain current of 4.5A and a gate-source voltage of 10V
  • Gate Threshold Voltage: 4V @ a drain current of 1mA
  • Maximum Power Dissipation: 40W @ a case temperature of 25°C
  • Mounting Type: through-hole
  • Package: TO-220-3

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