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Same model may have multiple batches, images only for reference.
CY14B104LA-ZS20XI Real Image
Same model may have multiple batches, images only for reference.

CY14B104LA-ZS20XI

Part No CY14B104LA-ZS20XI
Manufacturer Infineon Technologies
Catalog Memory
Description IC NVSRAM 4MBIT PAR 44TSOP II
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Infineon Technologies
Package Tray
Product Status Active
Programmable Not Verified
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 4Mbit
Memory Organization 512K x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 20ns
Access Time 20 ns
Voltage - Supply 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP II
Base Product Number CY14B104
Standard Package 675 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Win Source Part Number 581256-CY14B104LA-ZS20XI
Ultra Librarian 3D Model Ultra Librarian CY14B104LA-ZS20XI CAD Model

Description

The CY14B104LA-ZS20XI is a memory chip designed by Infineon Technologies.

  • Type: 4Mbit NVSRAM (Non-Volatile SRAM)
  • Voltage Supply Range: 2.7V to 3.6V
  • Access Time: 20 ns
  • Package: 44-TSOP
  • Mounting Type: surface mountable
  • Memory Organization: 512K x 8
  • Temperature Range: -40°C to 85°C
  • Memory Interface: parallel
  • Write Cycle Time: 20ns
  • Memory Type: non-volatile

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