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IAUC90N10S5N062ATMA1

Part No IAUC90N10S5N062ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 90A TDSON-8-34 / N-Channel 100 V 90A (Tc) 115W (Tc) Surface Mount PG-TDSON-8-34
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™-5
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 6.2mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 3.8V @ 59µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3275 pF @ 50 V
Power Dissipation (Max) 115W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-34
Package / Case 8-PowerTDFN
Base Product Number IAUC90
Standard Package 5,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1337184-IAUC90N10S5N062ATMA1
Ultra Librarian 3D Model Ultra Librarian IAUC90N10S5N062ATMA1 CAD Model

Description

The Infineon Technologies OptiMOS-5 IAUC90 MOSFET is an N-Channel FET type.

  • Drain to Source Voltage (Vdss): 100V
  • Power Dissipation (Max): 115W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Package / Case: 8-PowerTDFN
  • Operating Temperature: -55°C to 175°C (TJ)
  • Base Product Number: IAUC90
  • Input Capacitance (Ciss) (Max) @ Vds: 3275 pF @ 50V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7137 $51.4110
75+ $1.4061 $105.4575
115+ $1.3622 $156.6530
155+ $1.3183 $204.3365
200+ $1.2743 $254.8600
265+ $1.1425 $302.7625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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