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IDH10G65C5XKSA2 Real Image
Same model may have multiple batches, images only for reference.

IDH10G65C5XKSA2

Part No IDH10G65C5XKSA2
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTKY 650V 10A TO220-2-1  /  Diode Silicon Carbide Schottky 650 V 10A (DC) Through Hole PG-TO220-2-1
Datasheet
IDH10G65C5XKSA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Infineon Technologies
Series CoolSiC™+
Package Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 10A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 180 µA @ 650 V
Capacitance @ Vr, F 300pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package PG-TO220-2-1
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number IDH10G65
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Names SP001632410
Standard Package 50
Win Source Part Number 1158762-IDH10G65C5XKSA2
Ultra Librarian 3D Model Ultra Librarian IDH10G65C5XKSA2 CAD Model

Description

The IDH10G65C5XKSA2 is a silicon carbide Schottky diode that belongs to the CoolSiC™+ series.

  • Series: CoolSiC™+
  • Maximum Reverse Voltage: 650V
  • Average Rectified Current: 10A (DC)
  • Forward Voltage: 1.7V @ 10A
  • Recovery Time: No recovery time greater than 500mA
  • Reverse Recovery Time: 0ns
  • Reverse Leakage Current: 180μA @ 650V
  • Operating Temperature Range: -55°C to 175°C
  • Package: TO-220-2

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