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IDH20G65C5XKSA2 Real Image
Same model may have multiple batches, images only for reference.

IDH20G65C5XKSA2

Part No IDH20G65C5XKSA2
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTKY 650V 20A TO220-2-1  /  Diode Silicon Carbide Schottky 650 V 20A (DC) Through Hole PG-TO220-2-1
Datasheet
IDH20G65C5XKSA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Infineon Technologies
Series CoolSiC™+
Package Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 20A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 20 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 210 µA @ 650 V
Capacitance @ Vr, F 590pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package PG-TO220-2-1
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number IDH20G65
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Names SP001632412
Standard Package 50
Win Source Part Number 1064309-IDH20G65C5XKSA2
Ultra Librarian 3D Model Ultra Librarian IDH20G65C5XKSA2 CAD Model

Description

The Infineon Technologies IDH20G65C5XKSA2 is a silicon carbide Schottky diode that has a maximum DC reverse voltage (Vr) of 650V and an average rectified current (Io) of 20A (DC).

  • DC Reverse Voltage (Vr): 650V
  • Average Rectified Current (Io): 20A (DC)
  • Forward Voltage (Vf): 1.7V @ 20A
  • Reverse Recovery Time (trr): 0ns
  • Current Reverse Leakage @ Vr: 210μA @ 650V
  • Capacitance @ Vr, F: 590pF @ 1V, 1MHz
  • Package: TO-220-2
  • Mounting: Through Hole
  • MSL Level: 1 (unlimited)
  • Packaging: Tube

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