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IDK05G120C5XTMA1 Real Image
Same model may have multiple batches, images only for reference.

IDK05G120C5XTMA1

Part No IDK05G120C5XTMA1
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description SIC DISCRETE  /  Diode Silicon Carbide Schottky 1200 V 19.1A (DC) Surface Mount PG-TO263-2-1
Sample
Rohs State rohs
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Infineon Technologies
Series CoolSiC™+
Package Tape & Reel
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 19.1A (DC)
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 5 A
Speed No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr 33 µA @ 1200 V
Capacitance @ Vr, F 301pF @ 1V, 1MHz
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-2-1
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number IDK05G120
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Names 448-IDK05G120C5XTMA1DKR,2156-IDK05G120C5XTMA1-448,448-IDK05G120C5XTMA1CT,448-IDK05G120C5XTMA1TR,SP002739622
Standard Package 1,000
Win Source Part Number 989511-IDK05G120C5XTMA1
Ultra Librarian 3D Model Ultra Librarian IDK05G120C5XTMA1 CAD Model

Description

The Infineon Technologies IDK05G120C5XTMA1 is a discrete semiconductor product that falls under the category of diodes - rectifiers - single manufactured by Infineon Technologies.

  • Package: Tape and Reel (1000 Units)
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (max): 1200 V
  • Current - Average Rectified (Io): 19.1A (DC)
  • Voltage - Forward (Vf) (max) @ If: 1.8 V @ 5 A
  • Current - Reverse Leakage @ Vr: 33 μA @ 1200 V
  • Capacitance @ Vr, F: 301pF @ 1V, 1MHz
  • Operating Temperature Range: -55°C ~ 175°C
  • Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2-1

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