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Same model may have multiple batches, images only for reference.
IDW12G65C5XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IDW12G65C5XKSA1

Part No IDW12G65C5XKSA1
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 650V 12A TO247-3 / 5th Generation thinQ SiC Schottky Diode
Datasheet
IDW12G65C5XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series thinQ!
Packaging Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Maximum) 650V
Current - Average Rectified (Io) 12A (DC)
Voltage - Forward (Vf) (Maximum) @ If 1.7V @ 12A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage @ Vr 190μA @ 650V
Capacitance @ Vr, F 360pF @ 1V, 1MHz
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package PG-TO247-3
Operating Temperature - Junction -55°C ~ 175°C
Win Source Part Number 776671-IDW12G65C5XKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IDW12G65C5
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian IDW12G65C5XKSA1 CAD Model

Description

The IDW12G65C5XKSA1 is a Silicon Carbide Schottky Diode designed for use in Discrete Semiconductor Products. It is manufactured by Infineon Technologies and belongs to the thinQ! series.

  • Current - Average Rectified (Io): 12A (DC)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 190μA @ 650V
  • Capacitance @ Vr, F: 360pF @ 1V, 1MHz
  • Supplier Device Package: PG-TO247-3-3
  • Operating Temperature: -55°C ~ 175°C

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