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IGB10N60TATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IGB10N60TATMA1

Part No IGB10N60TATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 20A 110W TO263-3
Datasheet
IGB10N60TATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
IGBT Type NPT, Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 20A
Pulsed Collector Current 30A
Collector-emitter saturation voltage(Max) 2.05V @ 15V, 10A
Maximum Power Dissipation 110W
Total Switching Energy(Ets) 430μJ
Input Type Standard
Gate Charge 62nC
Turn-on and Turn-off delay time 12ns/215ns
Testing Conditions 400V, 10A, 23 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Win Source Part Number 1045132-IGB10N60TATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IGB10N60TATMA1 CAD Model

Description

The Infineon Technologies 433626 is an NPT, Trench Field Stop IGBT designed for use in discrete semiconductor products.

  • Collector-Emitter Breakdown Voltage: 600V
  • Current Collector: 20A
  • Package: PG-TO263-3-2
  • Temperature Range: -40°C to 175°C
  • Power Dissipation: 110W
  • Collector-Emitter Saturation Voltage: 2.05V @ 15V, 10A
  • Gate Charge: 62nC
  • Total Switching Energy: 430μJ
  • Turn-on Delay Time: 12ns
  • Turn-off Delay Time: 215ns
  • Status: active

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