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Same model may have multiple batches, images only for reference.
IGW40N60H3FKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IGW40N60H3FKSA1

Part No IGW40N60H3FKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 80A 306W TO247-3
Datasheet
IGW40N60H3FKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Pulsed Collector Current 160A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 40A
Maximum Power Dissipation 306W
Total Switching Energy(Ets) 1.68mJ
Input Type Standard
Gate Charge 223nC
Turn-on and Turn-off delay time 19ns/197ns
Testing Conditions 400V, 40A, 7.9 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 1045150-IGW40N60H3FKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IGW40N60H3FKSA1 CAD Model

Description

The Infineon Technologies IGBT is a trench field stop type transistor designed for use in discrete semiconductor products.

  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 80A
  • Gate Charge: 223nC
  • Package: PG-TO247-3
  • Mounting: Through-Hole
  • Collector-Emitter Saturation Voltage: 2.4V @ 15V, 40A
  • Total Switching Energy: 1.68mJ

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