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IKW75N60TFKSA1

Part No IKW75N60TFKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 80A 428W TO247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Pulsed Collector Current 225A
Collector-emitter saturation voltage(Max) 2V @ 15V, 75A
Maximum Power Dissipation 428W
Total Switching Energy(Ets) 4.5mJ
Input Type Standard
Gate Charge 470nC
Turn-on and Turn-off delay time 33ns/330ns
Testing Conditions 400V, 75A, 5 Ohm, 15V
Reverse Recovery Time (trr) 121ns
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 120964-IKW75N60TFKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IKW75N60TFKSA1 CAD Model

Description

The Infineon Technologies 120964-IKW75N60TFKSA1 is an IGBT transistor with a maximum current collector of 80A and a maximum power dissipation of 428W.

  • Maximum Current Collector: 80A
  • Maximum Power Dissipation: 428W
  • Reverse Recovery Time: 121ns
  • Technology: Trench Field Stop
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
  • Pulsed Collector Current: 225A
  • Collector-Emitter Saturation Voltage at Maximum: 2V @ 15V, 75A
  • Turn-On Delay Time: 33ns
  • Turn-Off Delay Time: 330ns
  • Package: PG-TO247-3
  • Input Type: Standard

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