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Same model may have multiple batches, images only for reference.
IMW120R014M1HXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMW120R014M1HXKSA1

Part No IMW120R014M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SIC DISCRETE
Datasheet
IMW120R014M1HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202240-IMW120R014M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Power Dissipation (Max) 455W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Ultra Librarian 3D Model Ultra Librarian IMW120R014M1HXKSA1 CAD Model

Description

The Infineon Technologies CoolSiC™ is a N-Channel SiCFET (Silicon Carbide) transistor designed for high power dissipation applications.

  • Power Dissipation: 455W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package Type: Through-Hole

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11+ $32.3110 $355.4210
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