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IPA045N10N3G

Part No IPA045N10N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 64A TO220-FP
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 150μA
Max Gate Charge 117nC @ 10V
Max Input Capacitance 8410pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 39W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 64A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 068927-IPA045N10N3G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA045N10N3G CAD Model

Description

The Infineon Technologies 068927-IPA045N10N3G is a MOSFET technology with N-Channel polarity. This product has a power dissipation (Max) of 39W (Tc) and is categorized under discrete semiconductor products. The mounting is through-hole and the packaging is tube/rail. The temperature range for operation is -55°C to 175°C (TJ). The drain-source breakdown voltage is 100V and the continuous drain current @ 25°C is 64A (Tc). The gate-source threshold voltage is 3.5V @ 150μA and the maximum gate charge is 117nC @ 10V. The maximum input capacitance is 8410pF @ 50V and the maximum Rds On @ Id,Vgs is 4.5 mOhm @ 64A, 10V.

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.4556 $51.5676
50+ $2.0149 $100.7450
77+ $1.9519 $150.2963
106+ $1.8889 $200.2234
137+ $1.8260 $250.1620
184+ $1.6371 $301.2264
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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