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Same model may have multiple batches, images only for reference.
IPA50R650CE Real Image
Same model may have multiple batches, images only for reference.

IPA50R650CE

Part No IPA50R650CE
Manufacturer Infineon Technologies
Catalog FETs - Single
Description 500V CoolMOS™ CE Power MOSFET | MOSFET N-CH 500V 6.1A TO220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 6.1A
Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Maximum) at Id, Vgs 650mOhm at 1.8A, 13V
Gate Source Voltage(th) (Maximum) at Id 3.5V at 150μA
Gate Charge (Qg) (Maximum) at Vgs 15nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 342pF at 100V
FET Feature Super Junction
Power Dissipation (Maximum) 27.2W
Temperature Range - Operating -40°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package PG-TO220-FP
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1185974-IPA50R650CE
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA50R650CE CAD Model

Description

The Infineon Technologies IPA50R650CE is a high-performance N-Channel MOSFET designed for use in a wide range of applications.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 6.1A
  • Mounting: through-hole technology
  • Package: PG-TO220-FP package
  • FET Feature: super junction
  • Transistor Polarity: N-Channel
  • Gate-Source Voltage(th) (maximum) @ Id: 3.5V @ 150μA
  • Gate Charge (Qg) (maximum) @ Vgs: 15nC @ 10V
  • Input Capacitance: 342pF @ 100V
  • Drive Voltage: 13V
  • Quality: The Infineon Technologies IPA50R650CE is a high-quality and reliable component that is ideal for use in a variety of electronic applications.

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