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Same model may have multiple batches, images only for reference.
IPA60R099P7XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPA60R099P7XKSA1

Part No IPA60R099P7XKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CHANNEL 600V 31A TO220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) at 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 99mOhm at 10.5A, 10V
Vgs(th) (Maximum) at Id 4V at 530μA
Gate Charge (Qg) (Maximum) at Vgs 45nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1952pF at 400V
Power Dissipation (Maximum) 29W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package PG-TO220 Full Pack
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 807103-IPA60R099P7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPA60R099P7XKSA1 CAD Model

Description

The IPA60R099P7XKSA1 is a N-Channel MOSFET from Infineon Technologies.

  • Drain to Source Voltage (Vdss): 600V
  • Power Dissipation (Maximum): 29W (Tc)
  • On-Resistance: 99mOhm @ 10.5A, 10V
  • Package: TO-220-3 full pack
  • Operating Temperature: -55°C to 150°C
  • Gate Charge (Qg): 45nC @ 10V
  • Input Capacitance (Ciss): 1952pF @ 400V
  • Packaging: Tube, 50 units per manufacturer pack

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.5396 $53.0940
35+ $2.9043 $101.6505
54+ $2.8136 $151.9344
74+ $2.7228 $201.4872
95+ $2.6321 $250.0495
128+ $2.3598 $302.0544
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