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IPA65R065C7XKSA1

Part No IPA65R065C7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 15A TO220-FP / N-Channel 650 V 15A (Tc) 34W (Tc) Through Hole PG-TO220-FP
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™ C7
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 17.1A, 10V
Vgs(th) (Max) @ Id 4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3020 pF @ 400 V
Power Dissipation (Max) 34W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
Base Product Number IPA65R065
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1338249-IPA65R065C7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPA65R065C7XKSA1 CAD Model

Description

The IPA65R065C7XKSA1 is a part of the CoolMOS™ C7 series of N-Channel MOSFETs.

  • Series: CoolMOS™ C7
  • Type: N-Channel MOSFET
  • Drain to Source Voltage: 650V
  • Power Dissipation: 34W (Tc)
  • Maximum Vgs: ±20V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Mounting Type: Through-Hole
  • Package: TO-220-3 Full Pack
  • Maximum Rds On: 65mOhm @ 17.1A, 10V
  • Gate Charge: 64nC @ 10V
  • Input Capacitance: 3020pF @ 400V

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2566 $62.5660
23+ $5.1340 $118.0820
35+ $4.9734 $174.0690
48+ $4.8129 $231.0192
63+ $4.6523 $293.0949
84+ $4.1719 $350.4396
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 424 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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