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IPA65R095C7XKSA1

Part No IPA65R095C7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 650V 12A TO220-FP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2140 pF @ 400 V
Power Dissipation (Max) 34W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Case / Package TO-220-3 Full Pack
Package Tube
Supply and Demand Status Shortage
Win Source Part Number 1495128-IPA65R095C7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPA65R095C7XKSA1 CAD Model

Description

N

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Shipping Information

Shipped from HK warehouse
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