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Same model may have multiple batches, images only for reference.
SI7868ADP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7868ADP-T1-GE3

Part No SI7868ADP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 40A PPAK SO-8
Datasheet
SI7868ADP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.6V @ 250μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 6110pF @ 10V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 2.25 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 211672-SI7868ADP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7868ADP-T1-GE3 CAD Model

Description

The Vishay SI7868ADP-T1-GE3 is an N-channel MOSFET that is ideal for use in a range of applications.

  • Maximum Power Dissipation: 5.4W (Ta) and 83W (Tc)
  • Suitable for: handling high power loads
  • Features: low Rds On @ Id, Vgs and a high gate charge
  • Ideal for: high-frequency applications
  • Package: PowerPAK SO-8
  • Supply: limited supply
  • Popularity: medium popularity

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.3853 $60.9354
42+ $2.7778 $116.6676
65+ $2.6912 $174.9280
89+ $2.6045 $231.8005
115+ $2.5179 $289.5585
154+ $2.2569 $347.5626
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Availability: 32,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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